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Title:: Transparent Oxide Semiconductor and Its Solution Processes for Thin Film Transistor

Author(s):: Teng Zhou; Zheng Chen; Zheng Cui; Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Keywords:: -

CLC:

PACS:: -

DOI:: 10.7502/j.issn.1674-3962.2014.03.03

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Abstract:: Transparent oxide is one of the most important transparent electronic materials. The nature of transparent oxide materials as semiconductors with wide band gap is their high charge mobility. Their charge carrier concentrations can be adjusted in wide range by controlling the composition and structure in oxide, making them as either semiconductors or conductors. Transparent conductive oxides in particular have been extensively studied for many years and can be found in wide range of commercial products. The low temperature processed transparent oxide semiconductor (TOS) appeared in high performance thin film transistors ten years ago. Since then TOSs have gained extensive attention as the new generation semiconductor. Owing to considerable advances in the last few years, thin film transistors based on transparent oxide semiconductors are approaching the commercial market. Particularly, the solution processed transparent oxide is among the most promising printable semiconductor materials which have displayed good electronic performance, low processed temperature and high stability in ambient atmosphere. In this paper, transparent conducting oxide including three basic oxides compounds was briefly reviewed. Then, the history of transparent oxide semiconductor was introduced. Emphasis was placed on the latest research on solution-processed TOS for printable thin-film transistors (TFT) which have demonstrated mobility up to 10 cm2V-1s-1 and on/off ratio more than 106 even at low processed temperature as low as 200℃.

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Transparent Oxide Semiconductor and Its Solution Processes for Thin Film Transistor(PDF)

MATERIALS CHINA[ISSN:1674-3962/CN:61-1473/TG]

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