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Title:: Interfacial Structural Characterization and Modulation in Metal Oxide Semiconductors

Author(s):: JIANG Renhui1; LI Pei1; MENG Qi1; LI Lei2; ZHAO Peili1; JIA Shuangfeng1; ZHENG He1; 3; 4; WANG Jianbo1; 2; （1. School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-Structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China）（2. Core Facility of Wuhan University, Wuhan 430072, China）（3. Suzhou Institute of Wuhan University, Suzhou 215123, China）（4. Wuhan University Shenzhen Research Institute, Shenzhen 518057, China）

Abstract:: Interfaces have important effects on the mechanical, thermal, electrical, magnetic, and catalytic properties of materials. Therefore, the analysis of atomic structure of the interface and the study of interface construction are of great significance to control the properties of materials. In this paper, the interfacial atomic structures of metal oxides were characterized by transmission electron microscopy. The phase transitions induced by electric field, electron beam irradiation and mechanical stress were presented, based upon which the possible phase boundary engineering was discussed. (1) The rotational domain structures were found in the Na0.36WO3.14 sample, and the Na0.36WO3.14/Na0.48WO3 phase boundary was created by applying an electric field. (2) The formation process of the Na0.5WO3.25/NaxWO3 interface was revealed at the atomic scale. (3) The reversible phase transformation mechanism from wurtzite (WZ) to h-MgO structure in ZnO nanobridges under tensile stress was elucidated. Additionally, the nucleation of Cu3O2 phase due to the oxygen vacancy migration in CuO nanowires under compressive stress was studied, and the Cu3O2/CuO phase boundary evolution mechanism was further discussed. The authors present this review on the structural characterization and modulation of metal oxide semiconductor interfaces based on the recent work, hoping to provide a reference for the structure and property modulation in metal oxide semiconductors.