[1]郭俊杰,許并社.球差矯正電子顯微鏡在新型二維晶體材料研究中的應(yīng)用[J].中國(guó)材料進(jìn)展,2015,(5):006-10.[doi:10.7502/j.issn.1674-3962.2015.05.04]
GUO Junjie,XU Bingshe.Application of aberration-corrected electron microscope on the study of novel two-dimensional crystals[J].MATERIALS CHINA,2015,(5):006-10.[doi:10.7502/j.issn.1674-3962.2015.05.04]
點(diǎn)擊復(fù)制
球差矯正電子顯微鏡在新型二維晶體材料研究中的應(yīng)用(
)
中國(guó)材料進(jìn)展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
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- 期數(shù):
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2015年第5期
- 頁(yè)碼:
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006-10
- 欄目:
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特約研究論文
- 出版日期:
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2015-05-31
文章信息/Info
- Title:
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Application of aberration-corrected electron microscope on the study of novel two-dimensional crystals
- 作者:
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郭俊杰 ; 許并社
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太原理工大學(xué) 新材料界面科學(xué)與工程教育部重點(diǎn)實(shí)驗(yàn)室
- Author(s):
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GUO Junjie; XU Bingshe
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Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education,Taiyuan University of Technology
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- 關(guān)鍵詞:
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掃描透射電子顯微鏡; 電子能量損失譜; 石墨烯; 二維晶體
- DOI:
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10.7502/j.issn.1674-3962.2015.05.04
- 文獻(xiàn)標(biāo)志碼:
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A
- 摘要:
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近年來(lái),二維晶體材料由于其獨(dú)特的微觀結(jié)構(gòu)和新穎的物理化學(xué)性能得到了諸多領(lǐng)域研究者的廣泛關(guān)注。本文簡(jiǎn)要介紹了球差矯正電子顯微學(xué)在新型二維晶體材料研究中的最新進(jìn)展。裝備有球差矯正器的新型電子顯微鏡在低加速電壓下(60kV)的分辨率可以達(dá)到~0.1nm,避免了對(duì)B, C, N 和O等輕元素原子的knock-on 損傷。通過(guò)原子分辨率的電子能量損失譜分析驗(yàn)證了原子序數(shù)襯度成像在二維晶體觀測(cè)中的可靠性。利用球差矯正電子顯微成像技術(shù)在二維晶體中快速準(zhǔn)確判斷摻雜原子的種類,可以研究二維晶體材料中原子尺度的界面和缺陷結(jié)構(gòu),這一進(jìn)展將對(duì)晶體結(jié)構(gòu)學(xué)、材料科學(xué)、物理學(xué)等產(chǎn)生重大影響。
- Abstract:
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In recent years, two-dimensional crystals have sparked high scientific interest in various research fields due to their special microstructures and novel physical and chemical properties. Here, we introduce the recent developments in 2D crystals studied by the aberration corrected scanning transmission electron microscope (STEM). The latest STEM equipped a new aberration corrector has made it possible to reach probe sizes close to 0.1 nm at 60 keV, an operating energy that avoids direct knock-on damage in materials consisting of light atoms such as B, C, N and O. The strong Z dependence of annular dark field (ADF) imaging on 2D crystals, convinced by atomic resolution electron energy loss spectroscopy (EELS) analysis, allows the chemical identification of individual atoms. The ability of explore the atomic resolution interface and defect structure in 2D crystals can make contribution to the crystallography, materials science, and physics.
更新日期/Last Update:
2015-04-29