文章信息/Info

Title:

Effect of GaN—Based Film Materials on the Performance of Photoelectric Device

作者:

陳席斌1; 馬淑芳 2; 董海亮1; 梁 建1;  許并社1

1.太原理工大學(xué)新材料界面科學(xué)與工程教育部重點(diǎn)實(shí)驗(yàn)室，山西 太原， 030024 2. 北京工業(yè)大學(xué) 激光工程研究院，北京 010100

Author(s):

CHEN Xibin1;  MA Shufang1; 2; DONG Hailiang1;  LIANG Jian1;  XU Binshe1

1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024,China 2. Institute of Laser Engineering, Beijing University of Technology, Beijing 010100, China

關(guān)鍵詞:

GaN; 正向電壓; 發(fā)光強(qiáng)度

DOI:

10.7502/j.issn.1674-3962.2015.05.01

文獻(xiàn)標(biāo)志碼:

A

摘要:

采用金屬有機(jī)化學(xué)氣相沉積方法在藍(lán)寶石襯底上外延生長(zhǎng)GaN基材料，設(shè)計(jì)并優(yōu)化外延生長(zhǎng)條件，探索單層N型GaN(N-GaN)、多量子阱（MQW）、電子阻擋層（P-AlGaN）、P型GaN(P-GaN)材料對(duì)發(fā)光二極管(LED)器件的光電性能的影響。通過(guò)X射線衍射儀（XRD）、電致發(fā)光譜(EL) 、光致發(fā)光譜（PL）等測(cè)試設(shè)備對(duì)外延片進(jìn)行表征。結(jié)果表明：經(jīng)優(yōu)化Si摻N-GaN和壘層（QB），獲得較好的（102）、（002）半峰寬，正向電壓從4.05 V分別降至3.84 V、3.47 V，發(fā)光強(qiáng)度從5.68 mV提高到6.08 mV。然后對(duì)P型AlGaN層進(jìn)行Mg摻雜優(yōu)化，正向電壓下降至3.35 V，發(fā)光強(qiáng)度提高到6.14 mV。最后對(duì)P-GaN層進(jìn)行了生長(zhǎng)溫度及退火溫度的優(yōu)化，結(jié)果發(fā)現(xiàn)正向電壓從3.35 V提高至3.41 V，發(fā)光強(qiáng)度提高至6.75 mV左右。全自動(dòng)探針臺(tái)在測(cè)試電流是20 mA的條件下，對(duì)芯片的電壓和發(fā)光強(qiáng)度進(jìn)行了測(cè)試，電壓大致從4.5 V降到3.8 V左右，下降了16％。發(fā)光強(qiáng)度大概從110 mcd提高到135 mcd，提高了20％左右。經(jīng)實(shí)驗(yàn)結(jié)果與理論綜合分析，解釋了N-GaN層和QB層Si摻，P-AlGaN 層Mg摻，P-GaN層生長(zhǎng)溫度及活化溫度對(duì)正向電壓和亮度的影響，從而為高質(zhì)量GaN薄膜材料外延生長(zhǎng)及高性能的LED優(yōu)化提供了更好的實(shí)驗(yàn)指導(dǎo)與理論支持。

Abstract:

The epitaxial growth of GaN-based film materials on the sapphire substrate was processed by metal organic chemical vapor deposition method. The structure of epitaxial wafers was designed and epitaxial growth conditions on single N-type GaN (N-GaN), multiple quantum well (MQW), electron blocking layer (P-AlGaN) and P-type GaN (P-GaN) material were optimized. The epitaxial wafers were characterized by X-ray diffraction (XRD), electroluminescence (EL), photoluminescence (PL). Results show that the optimized Si doped N-GaN and quantum barrier (QB) layer could lead better half peak width of (102), (002), voltage increases from 4.05 V to 3.84 V, 3.47 V, and luminous intensity increases from 5.68 mV to 6.08 mV. Then, Mg doped P-AlGaN layer was optimized, voltage reduces to 3.35 V and luminous intensity increases to 6.14 mV. Finally, The optimization of the growth temperature and annealing temperature on P-GaN layer make voltage increase from 3.35 V to 3.41 V, and luminous intensity increase to 6.75 mV. The voltage and the luminous intensity of chips were tested by automatic probe test under the test current of 20 mA. After optimization, the voltage decreases from 4.5 V to 3.8 V roughly, fell by 16%. Luminous intensity increases from 110 mcd to 135 mcd, increasing by 20% . Then, combining the experimental results and the theories, the influence of the N-GaN layer , Si doped QB layer, Mg doped P-AlGaN layer, and the growth temperature and activation temperature of P-GaN layer on the voltage and brightness were analyzed. These results may provide a better experiment guidance and theoretical support for the growth of high quality GaN epitaxial thin film materials and the optimization of high performance LED device.