文章信息/Info

Title:

 Study on Technics of Electroless Copper Plating on SiC Particle

作者:

 吳開霞1; 王 博2

 （1�彼拇ù髮W錦城學院機械工程系,四川 成都611731）
（2�睗�南玫德鑄造有限公司,山東 濟南250400）

Author(s):

 WU Kaixia1;  WANG Bo 2

 (1�盌epartment of Mechanical Engineering, Jin�睠heng College of Sichuan University, Chengdu 611731,China)
(2�盝inan Mei De Casting CO., LTD., Jinan 250400, China)

關鍵詞:

碳化硅; 化學鍍銅; 活化工藝

DOI:

10.7502/j.issn.1674-3962.2016.08.11

文獻標志碼:

A

摘要:

化學鍍銅在生產中應用比較廣泛，但是在化學鍍銅過程中的活化工藝所需試劑有毒，并且價格較為昂貴。探討了取消化學鍍銅過程中的活化工藝后，其他工藝條件對SiC鍍銅效果的影響規(guī)律。經實驗分析，獲得了化學鍍銅實驗優(yōu)化工藝參數(shù)為：化學鍍銅溶液溫度為35 ℃，溶液pH值用氫氧化鈉調節(jié)至12~13，硫酸銅加入量為12 g/L，甲醛加入量為28 ml/L，酒石酸鉀鈉加入量為40 g/L，經過一定時間在碳化硅表面得到了良好的銅鍍層。通過X射線衍射儀及掃描電鏡檢測，結果表明：取消了活化工藝后，在碳化硅表面仍然得到了較好的銅包覆層。

Abstract:

Chemical copper plating is widely applied in the production, but the reagent used in activation technology is toxic and expensive. The paper discussed the influence of the rule of other process conditions of electroless plating on SiC copper plating effect. The optimal process parameters of experiment by analyzing was that electroless copper plating solution temperature was 35 °C, the pH value of the solution was adjusted to 12~13 with sodium hydroxide, the amount of copper sulfate added to 12 g/L, the amount of formaldehyde added to 28 ml/L, sodium potassium tartrate added in an amount of 40 g/L, after a certain time, we will get a good copper plating layer on the silicon carbide surface. By EDS analysis and scanning electron microscopy (SEM) testing, the results show that the surface of the silicon carbide still gets the better copper plating layer without the activation process.