文章信息/Info

Title:

 Measuring the thermal conductivity of Barium Titanate thin films using the three-omega method

作者:

 何 龍1; 姚 光1;  潘 泰松1;  高 敏1; 林 媛1; 2

 (1.電子科技大學(xué) 電子薄膜與集成器件國(guó)家重點(diǎn)實(shí)驗(yàn)室，四川 成都 610054;
2. 東莞電子科技大學(xué)電子信息工程研究院, 廣東 東莞 523808)

Author(s):

 HE Long1;  YAO Guang1;  PAN Taisong1;  GAO Min1;  LIN Yuan1; 2

 （1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China；2. Institute of Electronic and Information Engineering in Dongguan, University of Electronic Science and Technology of China, Dongguan 523808, Guangdong, China)

關(guān)鍵詞:

 ; 3ω法; 鈦酸鋇; 熱導(dǎo)率; 界面熱阻

DOI:

10.7502/j.issn.1674-3962.2016.09.09

文獻(xiàn)標(biāo)志碼:

A

摘要:

電子設(shè)備小型化帶來(lái)的熱效應(yīng)問(wèn)題使得提高薄膜材料熱導(dǎo)率和降低薄膜與基底的界面熱阻成為提高薄膜器件可靠性的關(guān)鍵因素，因此測(cè)量薄膜器件熱性能成為了電子工業(yè)中愈發(fā)重要的課題。鈣鈦礦結(jié)構(gòu)的鈦酸鋇作為一種高介電常數(shù)材料，在電子工業(yè)中被廣泛使用。本文通過(guò)建立一套3ω法測(cè)試系統(tǒng)，測(cè)試了使用高分子輔助沉積法在SiO2薄膜上沉積的鈦酸鋇薄膜樣品的熱導(dǎo)率，并通過(guò)不同厚度薄膜熱阻與熱導(dǎo)率的關(guān)系，計(jì)算出鈦酸鋇薄膜的熱導(dǎo)率為5.63 W/mK，鈦酸鋇與SiO2的界面熱阻為2.13×10-8 m2W/K。

Abstract:

With the miniaturization of electrical devices, the problem caused by heating effect make increase the thermal conductivity and decrease the interfacial thermal resistance become an critical factor to improve the reliability of thin film devices. So, it is crucial to characterize the thermal properties of thin film devices in electronics industry. Barium Titanate (BTO) is an inorganic compound of the perovskite type with a high dielectric constant, and has been widely used in electronics industry. By developing a 3ω measuring system, the thermal conductivities of BTO samples prepared by polymer assisted deposition on SiO2 thin films were measured. By employing the relation between thermal conductivity and thermal resistance in thin films with different thickness, the BTO’s thermal conductivity is 5.63 W/mK, and the interfacial thermal resistance between BTO and SiO2 is 2.13×10-8 m2W/K.