文章信息/Info

Title:

Research Progress on Impact Factors to Output Power of Semiconductor Laser

文章編號(hào):

1674-3962(2021)03-0218-07

作者:

黃佳瑤1; 尚　林1; 馬淑芳1; 張　帥1; 劉青明1; 侯艷艷1; 孔慶波1; 許并社1; 2

（1.陜西科技大學(xué) 材料原子 · 分子科學(xué)研究所，陜西 西安 710021）（2.太原理工大學(xué) 新材料界面科學(xué)與工程教育部重點(diǎn)實(shí)驗(yàn)室，山西 太原 030024）

Author(s):

HUANG Jiayao1; SHANG Lin1; MA Shufang1; ZHANG Shuai1; LIU Qingming1;  HOU Yanyan1;  KONG Qingbo1; XU Bingshe1; 2

(1. Institute of Atomic and Molecular Science,Shaanxi University of Science and Technology,Xi’an 710021,China) (2. Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology,Taiyuan 030024,China)

關(guān)鍵詞:

大功率半導(dǎo)體激光器; 輸出功率; 腔面災(zāi)變; 載流子泄漏; 雙光子吸收; 縱向空間燒孔

Keywords:

high-power semiconductor laser;  output power; catastrophic optical damage;  carrier leakage;  two-photon absorption; longitudinal spatial hole burning

分類號(hào):

TN248.4

DOI:

10.7502/j.issn.1674-3962.201908013

文獻(xiàn)標(biāo)志碼:

A

摘要:

大功率半導(dǎo)體激光器是現(xiàn)代激光加工設(shè)備、激光再制造設(shè)備、激光醫(yī)療、激光顯示以及國(guó)防設(shè)備中重要的關(guān)鍵基礎(chǔ)元器件和核心組件，在工業(yè)和國(guó)防等領(lǐng)域有著廣泛的應(yīng)用。提高半導(dǎo)體激光器的輸出功率首先需要確定影響功率輸出的因素，然后通過(guò)優(yōu)化外延材料、芯片結(jié)構(gòu)和制備工藝來(lái)解決這些問(wèn)題。因此，對(duì)大功率半導(dǎo)體激光器輸出功率影響因素的研究具有重要的意義�；�于此，主要對(duì)限制GaAs基大功率半導(dǎo)體激光器輸出功率的因素進(jìn)行了綜述，總結(jié)了近幾年GaAs基大功率半導(dǎo)體激光器在腔面災(zāi)變、載流子泄漏、雙光子吸收以及縱向空間燒孔方面的研究進(jìn)展，這對(duì)進(jìn)一步提高半導(dǎo)體激光器的輸出功率、優(yōu)化半導(dǎo)體激光器的結(jié)構(gòu)設(shè)計(jì)、改進(jìn)外延材料的質(zhì)量以及提高材料的外延技術(shù)具有重要意義。

Abstract:

High-power semiconductor lasers are indispensably fundamental and essential components in the fields of equipment for modern laser processing, laser remanufacturing, laser medical treatment, laser displaying and national defense. They have extensive applications in industrial and defense fields. In order to increase the output power of semiconductor lasers, it is necessary to determine the impact factors of output power. Then, the output power improvement might be achieved through optimizing materials, structure and preparation process of semiconductor laser. Therefore, it is of great significance to study the impact factors on output power of semiconductor lasers. In this paper, the limitations for output power improving of GaAs-based high-power semiconductor lasers were reviewed. The research progress on catastrophic optical damage, carrier leakage, two-photon absorption and longitudinal spatial hole burning of GaAs-based high-power semiconductor lasers was summarized. It might accelerate the output power increasement, structural design optimization, materials quality improvement, and epitaxy technology promotion of semiconductor lasers.