文章信息/Info

Title:

Inverse Spin Hall Effect of Conductive Bismuth Oxide

文章編號:

1674-3962(2021)10-0756-05

作者:

王孟怡; 邱志勇

（大連理工大學(xué)材料科學(xué)與工程學(xué)院 三束材料改性教育部重點實驗室遼寧省能源材料及器件重點實驗室，遼寧 大連 116000）

Author(s):

WANG Mengyi;  QIU Zhiyong

(Key Laboratory of Energy Materials and Devices (Liaoning Province), Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116000, China)

關(guān)鍵詞:

氧化鉍; 導(dǎo)電氧化物; 逆自旋霍爾效應(yīng); 自旋霍爾角; 自旋擴散長度; 自旋泵浦

Keywords:

bismuth oxide;  conductive oxide;  inverse spin Hall effect;  spin Hall angle;  spin diffusion length;  spin pumping

分類號:

O469

DOI:

10.7502/j.issn.1674-3962.202101019

文獻標(biāo)志碼:

A

摘要:

自旋霍爾效應(yīng)及其逆效應(yīng)作為自旋電子學(xué)中實現(xiàn)自旋�搽姾赊D(zhuǎn)換的核心物理效應(yīng)，對純自旋流的產(chǎn)生、探測有著重要的應(yīng)用價值，是自旋電子器件開發(fā)與應(yīng)用的關(guān)鍵技術(shù)節(jié)點。對高自旋�搽姾赊D(zhuǎn)換效率材料體系的探索與開發(fā)是該領(lǐng)域的核心課題。以導(dǎo)電氧化鉍薄膜為對象，研究其中的逆自旋霍爾效應(yīng)。采用交流磁控濺射系統(tǒng)，使用氧化鉍陶瓷靶制備了不同厚度的導(dǎo)電氧化鉍薄膜，并與坡莫合金薄膜構(gòu)成鐵磁/非磁雙層自旋泵浦器件，在該器件中首次觀測并確認了導(dǎo)電氧化鉍薄膜中逆自旋霍爾效應(yīng)所對應(yīng)的電壓信號。通過逆自旋霍爾電壓對氧化鉍薄膜厚度的依存關(guān)系，定量地估算了氧化鉍薄膜的自旋霍爾角及自旋擴散長度。通過提出一種新的具備可觀測逆自旋霍爾效應(yīng)的材料體系，不僅拓展了自旋電子材料的選擇空間，也為新型自旋電子器件的設(shè)計和應(yīng)用提供了思路。

Abstract:

The direct and inverse spin Hall effect is the key effect for spin-charge conversion in spintronics, which plays a vital role in the generation and detection of pure spin currents. It is a core issue to develop and explore materials with high spin-charge conversion efficiency. Here, we demonstrate the inverse spin Hall effect in a conductive bismuth oxide. The bismuth oxide thin films with different thicknesses were prepared from a sintered bismuth oxide target by an rf-sputtering system. Then, permalloy/bismuth oxide bilayer spin pumping devices were developed, with which voltage signals corresponding to the inverse spin Hall effect were confirmed by the spin pumping technique. Furthermore, by systematical studying of bismuth-oxide thickness dependence of those spin Hall voltages, the spin Hall angle and spin diffusion length were quantitatively estimated. Our results propose a novel system with an observable inverse spin Hall effect, which expands the possibility of spintronic materials and guides a new path for the development of spin-based devices.