文章信息/Info

Title:

Research Progress on the Reliability and Damage Mechanism of Multi Field Coupling in Copper Interconnects for Electronic Packaging

文章編號:

1674-3962(2025)10-0881-12

作者:

曾超凡; 朱憶雪; 楊兆凱; 包宏偉; 馬飛

西安交通大學(xué) 金屬材料強度國家重點實驗室，陜西 西安 710049

Author(s):

ZENG Chaofan; ZHU Yixue; YANG Zhaokai; BAO Hongwei; MA Fei

State Key Laboratory of Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China

關(guān)鍵詞:

集成電路; 銅互連線; 電遷移; 擴散阻擋層; 模擬方法

Keywords:

integrated circuit;  copper interconnects;  electromigration;  diffusion barrier layer;  simulation methods

分類號:

TK124;TN405

DOI:

10.7502/j.issn.1674-3962.202305024

文獻標(biāo)志碼:

A

摘要:

伴隨著集成電路集成度的增加，芯片尺寸不斷減小，銅互連線的尺寸也逐漸達到納米級別，銅互連線在力、熱、電多場耦合條件下的電遷移行為是影響小尺寸下其可靠性的重要因素。首先介紹了小尺寸銅互連面臨的主要問題，如，電子散射及擴散阻擋層導(dǎo)致的電阻率的增加以及電遷移現(xiàn)象的加劇。其次，探討了微觀結(jié)構(gòu)、宏觀尺寸以及制作工藝等方面對銅互連線電遷移行為的影響，這些影響因素顯著改變了銅互連線的電遷移行為及壽命；介紹了對銅互連線進行電遷移行為及壽命預(yù)測的有限元法、相場法、熵?fù)p傷模型等模擬方法。最后，根據(jù)目前已知的影響電遷移的因素進一步指出了有望改善銅互連線的電遷移的發(fā)展策略以及研究方向，為高性能銅互連材料設(shè)計提供重要參考。

Abstract:

With the continuous reduction of integrated circuit chip size, the size of interconnects is gradually approaching the nanoscale, and interconnects have gone through materials from aluminum to copper, and now the metal cobalt that may replace copper. At present, mainstream chips still use copper as interconnection material, and the electromigration behavior under the condition of mechanical, thermal and electrical multi field coupling is an important factor affecting the reliability of small size copper interconnection. The development history of interconnect materials is introduced, and the advantages and disadvantages of aluminum and copper as interconnects are emphatically compared. It is pointed out that metal cobalt has advantages in resistivity and electromigration resistance, and is expected to become a new generation of interconnect materials. Then, the problems faced by small size copper interconnects are introduced, such as the increase of resistivity and electromigration. The influence factors of copper interconnection electromigration in microcosmic, macroscopic and technological aspects are emphatically discussed, and the finite element method, phase field method, entropy damage model, etc. for predicting electromigration are introduced. Finally, the technical problems faced by copper interconnects are further summarized, and the development strategies and research directions that are expected to improve electromigration are pointed out, providing important reference for the design of high�瞤erformance copper interconnection materials.